To further more increase its SiC technology, Infineon invested lots into testing on-state oxide reliability of electrically screened SiC MOSFETs and also the off state oxide stress a result of the electric field disorders in SiC power devices. One particular of those specific properties is that gate oxides in SiC-based https://www.facebook.com/permalink.php?story_fbid=pfbid0tgzbP3xvRNr7vz9ugJqxZ6qpW5rJYkaQNiedGwxis84bSqzVZmu65mEhkn4EEZaRl&id=61562415773754&__cft__[0]=AZUrPa6046vl1x5Ftd0n16emkDMeojSzj35m7-jdmqDLTpbX-jZAVM_uwJUldY-XHZ04cAZ6vkYT8gm1B3edr4TeP-Apugz1_-4oH5k3it3N097r57Ozvke5N3NZ60v_2AyVWmIqx2dFIvr0wOUjIISc44eGuRP-V0ExBtxAs2yhT7Ru9DNLZcRk2HWmDM0LShzlX5f-MGd7fLEthGwT_Rxd&__tn__=%2CO%2CP-R